| Specifications | Description | Tolerance |
|---|---|---|
| Orientation | <100> ; <111>; alternatives available |
Standard: ± 0.5° |
| Doping / Carrier Concentrations |
n-type: Tellurium p-type: Cadmium undoped: n-type |
n-type: 1E14 - 4E18/cm3 |
| Diameter | Production:
up to 125 mm Development: 150 mm |
Standard: ± 0.4 mm on circles |
| Wafer Diameter | 75 mm |
125mm |
|---|---|---|
| PV, front surface flatness |
< 5 μm |
< 5 μm |
| Total Thickness Variation |
< 5 μm |
< 10 μm |
| EPD/cm2 |
< 20 |
< 20 |
| Minor / Major flat lengths: SEMI- or Customer Spec | ||